Optical Isolator Technology for
Digital Input Data Acquisition Card

The optically coupled isolators device are consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard IC package.

All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.

Data Sheet of Opto Isolator Device 4N35

Input-to-Output Isolation Voltage: ±3550Vpeak
Operating Temperature: -55°C to +100°C

Input Diode

Forward DC Current: 60mA
Reverse DC Voltage: 6V
Peak Forward Current: 3A (t p=10us)
Power Dissipation: 100mW
Derate Linearly: 1.33mW/°C above 25°C

Output Transistor

Collector-Emitter Voltage: 30V
Emitter-Collector Voltage: 7V
Collector-Base Voltage: 70V
Power Dissipation: 300mW
Derate Linearly: 2.00mW/°C above 25°C

Total Power Dissipation: 400mW
Derate Linearly: 3.3mW/°C above 25°C